Jamiyanaa Dashdorj, Ph.D.

Associate Professor of 理论物理ics

412-365-1345

Buhl - 234A

Hometown: UlanBator
Joined Chatham: August 2016

ACADEMIC AREAS OF INTEREST

Development and characterization of semiconductor materials, charge transfer processes, and atomic transport properties.

PERSONAL AREAS OF INTEREST

Soccer, chess and travel.

传记

Jami Dashdorj studied and trained in Mongolia, Austria, Italy, and Brazil, before coming to U.S. for graduate school. 他获得了博士学位.D. in applied physics from Colorado School of Mines building a non-destructive minority carrier recombination lifetime mapping system at National Renewable Energy Laboratory. Prior to joining the faculty at Chatham, Dr. Dashdorj was a research associate at University of Alabama (Birmingham) investigating point defects and charge transfer mechanisms in GaN, SrTiO3, ZnSe and SiC using electron paramagnetic resonance spectroscopy.

教育

PhD in :ied 理论物理ics, Colorado School of Mines
MS in Condensed Matter 理论物理ics, International Center for Theoretical 理论物理ics (Trieste, Italy)
BS in 理论物理ics, University of Mongolia (UlanBator)

奖

Italian Government Scholarship (Trieste, Italy)
International Atomic Energy Agency Fellowship (Vienna, Austria)
TWAS/CNPQ Fellowship for 访问ing Scientist at Federal University of Parana (Curitiba, Brazil)

组织

American 理论物理ical Society (APS)
母亲ials 研究 Society (MRS)

SELECTED PUBLICATIONS

A. Viehland E. 杜卡斯,M. 科迪亚,一个. 鳟鱼和J. Dashdorj。”Third order transport coefficients of ion swarms”, J. 化学. 理论物理. 155, 204301 (2021)
A. Viehland H.R. Skullerud, M. 科迪亚J. 达什道尔吉和A. 鳟鱼。”Motion of NO+ ions in uniform electrostatic fields in the rare gases”, J. 理论物理. B:在. 摩尔. 选择. 理论物理. 54, 175202 (2021).
Dashdorj W.C. Pfalzgraff,.D. 鳟鱼、维. Fingerlow, M. 科迪尔和L.A. Viehland。”Determination of mobility and diffusion coefficients of Ar⁺ 和基于“增大化现实”技术²⁺ ions in argon gas”,Int. J. 离子美孚. 规范., 23, 143 (2020)
A. Viehland,. Lutfullaeva J. Dashdorj和R. 约翰森。”Accurate gaseous ion mobility measurements”,Int. J. 离子美孚. 规范., 20, 95 (2017)
R. 威洛比,M.E. Zvanut J. 达什道尔吉和M. Bockowski。”A model for Be-related photo-absorption in compensated GaN:Be substrates”, J. :. 理论物理. 120, 115701 (2016).
E. Zvanut J. Dashdorj J.A. Freitas小., E.R. 格拉泽,W.R. 威洛比,我.H. Leach和K. Udwary。”Incorporation of Mg in free-standing HVPE GaN substrates”, J. 电子. 母亲., 45, 2692 (2016)
Dashdorj W.R. 威洛比,M.E. 兹瓦努特先生. Bockowski。”电子 paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method”,物理. Status Solidi C, 4-5, 338 (2015)
M. 普尔J. Dashdorj, M.E. 兹瓦努特先生.D. 竟敢管。”Large persistent photoconductivity in strontium titanate at room temperature”,母亲. Res. Soc. 计算机协会. Proc. 1792 (2015).
Dashdorj, M.E. 兹瓦努特先生. Bockowski。”Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method”,物理. Status Solidi B, 1-5, 1 (2015)
V. Fedorov T. 大官邸,J. Dashdorj, M.E. 兹瓦努特和S.B. Mirov。”选择ical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals”,选择. 母亲. 37, 262, (2014).
Dashdorj, M.E. Zvanut J.G. 哈里森,K. Udwary和T. Paskova。”Charge transfer in semi-insulating Fe-doped GaN”, J. :. 理论物理. 112, 013712 (2012).
Dashdorj, M.E. 兹瓦努特和L.J. 斯坦利。”Iron-related defect levels in SrTiO₃ measured by photo-electron paramagnetic resonance spectroscopy”, J. :. 理论物理. 107, 083513 (2010).
Dashdorj, M.E. 兹瓦努特和J.G. 哈里森。”Measurements of optical cross sections of carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance”, J. :. 理论物理. 104, 113707 (2008).
Metzger R.K. Ahrenkiel J. D.J. 弗里德曼:“Analysis of charge separation dynamics in a semiconductor junction”,物理. 牧师. B 71, 035301 (2005).
Ahrenkiel和J. Dashdorj。”Interface recombination velocity measurement by a contactless microwave technique”, J. 真空吸尘器. Sci. 抛光工艺. B 22(4), 2063 (2004).

SELECTED PRESENTATIONS

Dashdorj L.A. Viehland,. Lutfullaeva, and R. 约翰森。”Accurate gaseous ion mobility measurements”, 70^th Annual Gaseous 电子ics Conference, Pittsburgh, PA, 2017.
Dashdorj, M.E. 兹瓦努特先生.M. Bockowski。”EPR detected defect center in bulk GaN substrates grown by high pressure nitrogen solution method”, APS March Meeting, San Antonia, TX, 2015.
Dashdorj, M.E. Zvanut J.G. 哈里森,T. 帕斯科娃和K. Udwary。”Thermal capture rate of electrons by Fe acceptor in GaN”, APS March Meeting, Dallas, TX, 2011.
Dashdorj, M.E. 兹瓦努特和J.G. 哈里森。”Charge transfer kinetics of the carbon vacancy defect in 4H-SiC”, APS March Meeting, Pittsburgh, PA, 2009.
Dashdorj, M.E. 兹瓦努特和J. 哈里森。”A defect relaxation model for the carbon vacancy in SiC”, APS March Meeting, New Orleans, LA, 2008.
达什道尔吉和M.E. Zvanut。”Study of chromium impurities in SrTiO₃ by photo-电子 Paramagnetic Resonance 规范troscopy”, MRS Fall Meeting, Boston, MA, 2007.
Dashdorj R.K. Ahrenkiel, and W.K. Metzger。”Modeling of recombination lifetimes in charge-separation device structures”, MRS Fall Meeting, Boston, MA, 2003.